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Silvaco Inc atlas tcad-based device simulation tool
Atlas Tcad Based Device Simulation Tool, supplied by Silvaco Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/atlas+simulation+tool/silvaco+tcad/10__1007_slash_s10825___024___02226___w-62-26-25
Average 90 stars, based on 1 article reviews
atlas tcad-based device simulation tool - by Bioz Stars, 2026-10
90/100 stars

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Article Title: Core-Shell Dual-Gate Nanowire Charge-Trap Memory for Synaptic Operations for Neuromorphic Applications
Article Snippet: The device is simulated with the Silvaco ATLAS (Santa Clara, CA, USA) simulation tool with calibrated models.

Article Title: p−n Junction Rectifying Characteristics of Purely n -Type GaN-Based Structures
Article Snippet: P. Zuo, Y. Jiang, Z. G. Ma, L. Wang, B. Zhao, Y. F. Li, G. Yue, H. Y. Wu, H. J. Yan, H. Q. Jia, W. X. Wang, J. M. Zhou, Q.. Sun, W.M.. Liu, An-Chun Ji, and H. Chen Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China Department of Physics, Capital Normal University, Beijing 100048, China Laboratory of Condensed Matter Theory and Materials Computation, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China (Received 7 August 2016; revised manuscript received 5 June 2017; published 9 August 2017)

Article Title: A study of electrical and optical characteristics of CZTSe solar cell using Silvaco Atlas
Article Snippet: Materials Today: Proceedings xxx (xxxx) xxx Contents lists available at ScienceDirect Materials Today: Proceedings journal homepage: www.elsevier .com/locate /matpr A study of electrical and optical characteristics of CZTSe solar cell using Silvaco Atlas https://doi.org/10.1016/j.matpr.2021.01.758 2214-7853/ 2021 Elsevier Ltd. All rights reserved.. Selection and peer-review under responsibility of the scientific committee of the International Conference on Smart and Sustainable Developments in M Manufacturing and Energy Engineering.. Please cite this article as: T. Joseph Mebelson and K. Elampari, A study of electrical and optical characteristics of CZTSe solar cell using Silvaco Atlas rials Today: Proceedings, https://doi.org/10.1016/j.matpr.2021.01.758 T. Joseph Mebelson a,b, K. Elampari b,c a Physics Research Centre, S. T. Hindu College, Nagercoil-2, India bAffiliated to Manonmaniam Sundaranar University, Abishekapatti, Tirunelveli 627 012, Tamilnadu, India cDepartment of Physics, S. T. Hindu College, Nagercoil-2, India a r t i c l e i n f o a b s t r a c t Article history: Received 5 December 2020 Received in revised form 20 January 2021 Accepted 23 January 2021 Available online xxxx Keywords: CZTSe Solar cell Silvaco Atlas Spectral response I-V characteristics This work represents the modeling and simulation of a CZTSe solar cell using the simulation software Silvaco Atlas.

Article Title: Design of High Performance Si/SiGe Heterojunction Tunneling FETs with a T-Shaped Gate
Article Snippet: Fig. 1 Schematic structures of a HTG-TFET, b LG-TFET, and c UTFET Fig. 2 Schematic of line tunneling and point tunneling in HTG-TFET The proposed HTG-TFET structure is investigated with Silvaco ATLAS simulation tool using the non-local BTBT model.

Article Title: Aspect Ratio Model for Radiation-Tolerant Dummy Gate-Assisted n-MOSFET Layout
Article Snippet: The standard n-MOSFET structure and DGA n-MOSFET structure were designed to be compatible with the commercial 0.35 μ m process technology using the SILVACO ATLAS simulation tool.

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Article Title: Influence of Doping Concentration and Thickness of Regions on the Performance of InGaN Single Junction-Based Solar Cells: A Simulation Approach
Article Snippet: .. The simulation study shows the relevance of the Silvaco ATLAS simulation tool for the optimization of doping concentration and thickness of n- and pInGaN regions for solar cells and would provide information for the fabrication of efficient, low-cost, and high-performance InGaN solar cells. .. Electrochem 2022, 3 414 Author Contributions: This work is the collaborative development of all the authors.

Article Title: Influence of Doping Concentration and Thickness of Regions on the Performance of InGaN Single Junction-Based Solar Cells: A Simulation Approach
Article Snippet: .. The simulation study shows the relevance of the Silvaco ATLAS simulation tool, as well as the optimization of doping concentration and thickness of nand p-InGaN regions for solar cells, which would make the development of high-performance InGaN solar cells low-cost and efficient. ..



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